symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 14.2 20 39 50 r jl 0.8 1.5 a repetitive avalanche energy l=0.1mh c 120 mj maximum junction-to-case c steady-state c/w thermal characteristicsparameter units maximum junction-to-ambient a t 10s r ja c/wc/w absolute maximum ratings t a =25c unless otherwise noted vv 12 pulsed drain current power dissipation b t c =25c gate-source voltage drain-source voltagemaximum junction-to-ambient a steady-state 8565 200 avalanche current c 30 power dissipation a t a =25c p dsm continuous draincurrent b,g maximum units parameter t c =25c g t c =100c b 30 w junction and storage temperature range a p d c 100 50 -55 to 175 t c =100c i d 2.5 w t a =70c 1.6 aod404n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 85a (v gs = 10v) r ds(on) < 7m (v gs = 10v) r ds(on) < 8m (v gs = 4.5v) uis tested! rg,ciss,coss,crss tested general description the aod404 uses advanced trench technology toprovide excellent r ds(on) , low gate chargeand low gate resistance. this device is ideally suited for use as a high side switch in cpu core power conversion. -rohs compliant -halogen free* g ds g to-252 d-pak top view s bottom view d g s alpha & omega semiconductor, ltd. www.aosmd.com
aod404 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.6 2 v i d(on) 85 a 5.4 7 t j =125c 8.4 10.5 6.6 8 m g fs 90 s v sd 0.74 1 v i s 85 a c iss 2100 2520 pf c oss 536 pf c rss 165 231 pf r g 0.5 0.95 1.2 q g (4.5v) 19.7 24 nc q gs 3.6 nc q gd 7.9 nc t d(on) 5.9 10 ns t r 11 17 ns t d(off) 36.2 55 ns t f 12 18 ns t rr 35 42 ns q rr 33 50 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice body diode reverse recovery timebody diode reverse recovery charge i f =20a, di/dt=100a/ s drain-source breakdown voltageon state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =30v, v gs =0v v ds =0v, v gs = 12v zero gate voltage drain currentgate-body leakage current r ds(on) static drain-source on-resistanceforward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters m v gs =4.5v, i d =20a i s =1a,v gs =0v v ds =5v, i d =20a turn-on rise timeturn-off delaytime v gs =10v, v ds =15v, r l =0.75 , r gen =3 turn-off fall time turn-on delaytime gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate chargegate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =4.5v, v ds =15v, i d =20a a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on steady-state r ja and the maximum allowed junction temperature of 150c. the value in any a given application depends on the user's specific board design, and the maximum temperature fo 175c may be used if the pcb or heatsink allows it.b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the packagelimit. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating.g. the maximum current rating is limited by the package current capability. *this device is guaranteed green after data code 8x11 (sep 1 st 2008). rev 8: sep 2008 alpha & omega semiconductor, ltd. www.aosmd.com
aod404 typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2.5v 3v 10v 3.5v 0 10 20 30 40 50 60 1 1.5 2 2.5 3 3.5 v gs (volts) figure 2: transfer characteristics i d (a) 4.5 5 5.5 6 6.5 7 7.5 0 10 20 30 40 50 60 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 4 8 12 16 20 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c i d =20a alpha & omega semiconductor, ltd. www.aosmd.com
aod404 typical electrical and thermal characteristics 0 1 2 3 4 5 0 5 10 15 20 25 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ? ja normalized transient thermal resistance c oss c rss 0.1 1 10 100 1000 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =20a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =50c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s alpha & omega semiconductor, ltd. www.aosmd.com
aod404 typical electrical and thermal characteristics 0 20 40 60 80 100 120 0.00001 0.0001 0.001 0.01 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) t a =25c dd d a v bv i l t ? ? = 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) alpha & omega semiconductor, ltd. www.aosmd.com
aod404 vgs + vdc dut l vgs isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc ig vds dut - + vdc vgs vgs 10v q g qgs qgd charge g ate c harge test circuit & w aveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms vds ar 2 e = 1/2 li ar ar alpha & omega semiconductor, ltd. www.aosmd.com
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